Demonstration and aging test of a radiation resistant strontium-90 betavoltaic mechanism
Demonstration and aging test of a radiation resistant strontium-90 betavoltaic mechanism
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DOI：
10.1063/1.5140780
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发表时间：
2020-04
影响因子：
4
通讯作者：
Yisong Lei;Yuqing Yang;Gang Li;Yebing Liu;Jian Xu;Xiaoling Xiong;Shunzhong Luo;Taiping Peng
中科院分区：
文献类型：
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作者：
Yisong Lei;Yuqing Yang;Gang Li;Yebing Liu;Jian Xu;Xiaoling Xiong;Shunzhong Luo;Taiping Peng
本工作建立了一个以锶-90为放射源的β-伏打与光伏相结合的机制。掺杂有铈离子的透明钇铝石榴石陶瓷用作中间转换层以避免对半导体转换器件的直接照射，并将大部分高能β粒子转化为光子。传统的N+PP+结结构的晶体硅转换器件同时起到β伏打和光伏转换器件的作用。通过0.9 MeV电子束辐照老化实验证明了耐辐照性。在0.5mm透明钇铝石榴石陶瓷的优化β-伏打装置中，晶体硅转换器件可以承受5 × 10 ~（15）e/cm ~ 2，输出功率下降小于15%。加载1.3 mCi锶-90，该β伏打设置产生282 nA的短路电流，0.168 V的开路电压，0.58的填充因子，和0.32%的总转换效率。
In this work, a betavoltaic combined with photovoltaic mechanism using strontium-90 as a radioactive source was built up. A transparent yttrium aluminum garnet ceramic doped with a cerium ion is used as an intermediate conversion layer to avoid direct irradiation to a semiconductor conversion device and translates most of the high energy beta particles into photons. The traditional crystalline silicon conversion device with an N+PP+ junction structure functions as a betavoltaic and photovoltaic conversion device simultaneously. Radiation resistance is demonstrated by a 0.9 MeV electron beam irradiation aging experiment. In the optimized betavoltaic setup with a 0.5 mm transparent yttrium aluminum garnet ceramic, the crystalline silicon conversion device can bear 5 × 1015 e/cm2 by degrading output power less than 15%. Loaded with 1.3 mCi strontium-90, this betavoltaic setup produces a short circuit current of 282 nA, an open circuit voltage of 0.168 V, a fill factor of 0.58, and a total conversion efficiency of 0.32%.