New route to densify tantalum carbide at 1400 °C by spark plasma sintering
New route to densify tantalum carbide at 1400 °C by spark plasma sintering
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DOI：
10.1016/j.msea.2011.02.074
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发表时间：
2011-05
期刊：
影响因子：
6.4
通讯作者：
Limeng Liu;F. Ye;Yu Zhou
中科院分区：
文献类型：
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作者：
Limeng Liu;F. Ye;Yu Zhou
采用放电等离子烧结技术，以工业钽粉和碳化钽粉为原料，在1400°C下烧结5 min，获得了相对密度为96%的碳化钽（TaC0.9）。这一结果是由于0.9TaC+Ta= TaC0.9反应中加热过程的精细重排限制了蒸发-冷凝并促进了物质的传递。致密的TaC0.9陶瓷具有均匀的等轴晶组织，抗弯强度高达498 MPa。
Tantalum carbide with a TaC0.9composition was sintered to 96% relative density by spark plasma sintering at 1400°C for 5min, using commercial micrometric Ta and TaC powders as the starting materials. This achievement was dependent on the delicate rearrangement of the heating process which limits evaporation–condensation and promotes the mass transportation in association with 0.9TaC+Ta=TaC0.9reaction. The dense TaC0.9ceramic had a uniform microstructure composed of equiaxed grains, and showed flexure strength up to ∼498MPa.