Microwave dielectric loss at single photon energies and millikelvin temperatures
Microwave dielectric loss at single photon energies and millikelvin temperatures
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DOI：
10.1063/1.2898887
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发表时间：
2008-02
影响因子：
4
通讯作者：
A. O'Connell;M. Ansmann;R. Bialczak;M. Hofheinz;N. Katz;E. Lucero;C. Mckenney;M. Neeley;H. Wan
中科院分区：
文献类型：
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作者：
A. O'Connell;M. Ansmann;R. Bialczak;M. Hofheinz;N. Katz;E. Lucero;C. Mckenney;M. Neeley;H. Wan
非晶介电材料在非常低的温度和非常低的激发强度下的微波性能显示出显著的过量损耗。本文介绍了在低温（T<100 mK）下，采用共面波导和集总LC谐振器，在单光子激发能量E_（ω0）~（？）这种损失可以用两能级状态缺陷模型来理解。本文对半波长谐振器进行了电路分析，并从理论上分析了多层介质基片上半波长谐振器的能量耗散。
The microwave performance of amorphous dielectric materials at very low temperatures and very low excitation strengths displays significant excess loss. Here, we present the loss tangents of some common amorphous and crystalline dielectrics, measured at low temperatures (T<100mK) with near single-photon excitation energies, E∕ℏω0∼1, using both coplanar waveguide and lumped LC resonators. The loss can be understood using a two-level state defect model. A circuit analysis of the half-wavelength resonators we used is outlined, and the energy dissipation of such a resonator on a multilayered dielectric substrate is theoretically considered.