A 20 dBm Fully-Integrated 60 GHz SiGe Power Amplifier With Automatic Level Control
A 20 dBm Fully-Integrated 60 GHz SiGe Power Amplifier With Automatic Level Control
复制标题
具有自动电平控制功能的 20 dBm 全集成 60 GHz SiGe 功率放大器
DOI：
10.1109/jssc.2007.899116
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发表时间：
2007
影响因子：
5.4
通讯作者：
D. Goren
中科院分区：
文献类型：
--
作者：
U. Pfeiffer;D. Goren
推出了适用于 60 GHz 工业科学医疗 (ISM) 频段应用的 + 20 dBm 功率放大器 (PA)。该 PA 采用 0.13-mum SiGe BiCMOS 工艺技术制造，具有完全集成的片上 RMS 功率检测器，用于自动电平控制 (ALC)、内置自测试和电压驻波比 (VSWR) 保护。单级推挽放大器采用中心抽头微带线，实现高效、紧凑的布局，核心面积为 0.075 mm2。该 PA 可以提供高达 20 dBm 的功率，这是迄今为止报道的硅中毫米波频率下无需功率组合的最高输出功率。在 60 GHz 时，它可实现 18 dB 的峰值功率增益、13.1 dBm 的 1 dB 压缩 (P1dB) 以及 12.7% 的峰值功率附加效率 (PAE)。该放大器可通过三线串行数字接口进行编程，从而实现 4V 电源的自适应偏置控制。
A + 20 dBm power amplifier (PA) for applications in the 60 GHz industrial scientific medical (ISM) band is presented. The PA is fabricated in a 0.13-mum SiGe BiCMOS process technology and features a fully-integrated on-chip RMS power detector for automatic level control (ALC), built-in self test and voltage standing wave ratio (VSWR) protection. The single-stage push-pull amplifier uses center-tapped microstrips for a highly efficient and compact layout with a core area of 0.075 mm2. The PA can deliver up to 20 dBm, which to date, is the highest reported output power at mm-wave frequencies in silicon without the need for power combining. At 60 GHz it achieves a peak power gain of 18 dB, a 1-dB compression (P1dB) of 13.1 dBm, and a peak power-added efficiency (PAE) of 12.7%. The amplifier is programmable through a three-wire serial digital interface enabeling an adaptive bias control from a 4-V supply.