Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition
Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition
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DOI：
10.1063/1.3601469
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发表时间：
2011-06
影响因子：
4
通讯作者：
L. Zhang;Xingzhan Wei;Ningtao Liu;Hsingmin Lu;J. Zeng;J. Wang;Yiming Zeng;J. M. Li
中科院分区：
文献类型：
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作者：
L. Zhang;Xingzhan Wei;Ningtao Liu;Hsingmin Lu;J. Zeng;J. Wang;Yiming Zeng;J. M. Li
我们的模拟结果[Appl. Phys. Lett. 98，101110（2011）]揭示了偏振掺杂的发光二极管（LED）由于由改善的空穴浓度和平滑的价带引起的增强的空穴注入而具有改善的内部量子效率。在这封信中，为了验证这些计算结果，偏振掺杂的发光二极管生长的金属有机化学气相沉积的影响。结果表明，偏振掺杂LED的电致发光强度和外量子效率（EQE）较传统LED有明显提高。研究了AlGaN渐变程度对偏振掺杂LED的影响。研究发现，当梯度AlGaN的Al组分从0.2线性减小到0. 5时，偏振掺杂LED具有最高的EQE。
Our simulated results [Appl. Phys. Lett. 98, 101110 (2011)] reveal that polarization-doped light-emitting diodes (LEDs) have improved internal quantum efficiency due to the enhanced hole injection caused by the improved hole concentration and smooth valence band. In this letter, in order to verify these calculated results, polarization-doped LEDs grown by metalorganic chemical vapor deposition are investigated. The results show that the polarization-doped LED has the improved electroluminescence intensity and external quantum efficiency (EQE) compared with the conventional LED. The influence of the degree of AlGaN gradation on polarization-doped LEDs is also studied. It is found that the polarization-doped LED has the highest EQE when the Al composition of the graded AlGaN is linearly decreased from 0.2 to 0.