A novel design method of concurrent dual-band power amplifiers including impedance tuning at inter-band modulation frequencies
A novel design method of concurrent dual-band power amplifiers including impedance tuning at inter-band modulation frequencies
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DOI：
10.1109/mwsym.2013.6697505
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发表时间：
2013-06
期刊：
影响因子：
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通讯作者：
Xiaofan Chen;Wen-hua Chen;F. Ghannouchi;Zhenghe Feng
中科院分区：
文献类型：
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作者：
Xiaofan Chen;Wen-hua Chen;F. Ghannouchi;Zhenghe Feng
提出了一种在带间调制(IM)频率下考虑阻抗调谐的并行双频功率放大器(PA)的设计方法。结果表明，晶体管在IM频率的阻抗对并行功率放大器的性能有很大影响。因此，考虑IM阻抗是非常必要的，这可以被称为IM阻抗操作，或简称IM调谐。利用该方法设计了一个1.92.6 GHz的并行双频功放，并设计了一个没有考虑IM调谐的常规并行双频功放作为比较对象。该功率放大器采用10瓦GaN HEMT设计，输出功率约为11瓦，在同时激励连续波激励的情况下，漏极效率高于72.8%。据我们所知，这是并发双频功放最先进的性能，也是第一个报道的带有IM调优的并发功放。
A novel design method of concurrent dual-band power amplifiers (PAs) including impedance tuning at inter-band modulation (IM) frequencies is proposed in this paper. It's shown that the impedances exhibited to the transistor at IM frequencies can affect the performance of a concurrent PA significantly. Thus it is very essential to take IM impedances into account, which can be referred to as IM impedance manipulation, or IM tuning for short. An example concurrent dual-band 1.92.6GHz PA is designed using the proposed method and a conventional concurrent dual-band PA not considering IM tuning is also designed for the purpose of comparison. Designed with a 10-Watts GaN HEMT, the proposed PA exhibits about 11 Watts output power and higher than 72.8% drain efficiency when driven equally by concurrent CW stimulus. To our best knowledge, this is the state-of-the-art performance of concurrent dual-band PA, and it's the first reported concurrent PA with IM tuning.