Compositional variation in sputtered Ti–W films due to re‐emission
Compositional variation in sputtered Ti–W films due to re‐emission
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由于再发射导致溅射 Ti-W 薄膜的成分变化
DOI：
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发表时间：
1994
期刊：
影响因子：
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通讯作者：
T. Cale
中科院分区：
文献类型：
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作者：
B. Rogers;C. Tracy;T. Cale
为了测试在Ti和Ti-W的溅射沉积（PVD）期间钛和/或钨的再发射，将膜沉积在具有测试结构的晶片上，所述测试结构具有不在源体积的视线内的大内部区域。俄歇电子能谱（AES）、扫描电子显微镜和透射电子显微镜的结果表明，在Ti PVD过程中，非常少的Ti被再发射，但是在Ti-W PVD过程中，很大一部分进入的Ti被再发射。AES光谱沿着周边的横截面显示，Ti-W膜成为富Ti的测试结构的区域没有视线的源体积。我们还考虑了沉积到沟槽结构中的Ti-W。基于物理的三维沉积过程模拟，假设Ti的扩散或镜面再发射，定性地解释了这些沟槽的实验结果。现有的信息不足以决定是否Ti粘附因子是较低的Ti-W膜或如果Ti是通过溅射。
To test for re‐emission of titanium and/or tungsten during sputter deposition (PVD) of Ti and Ti–W, films were deposited on wafers with test structures which have large interior areas which are not in line of sight to the source volume. Auger electron spectroscopy (AES), scanning electron microscopy, and transmission electron microscopy results show that very little Ti is re‐emitted during Ti PVD, but a significant fraction of incoming Ti is re‐emitted during Ti–W PVD. AES spectra along the perimeter of a cross section show that Ti–W films become Ti rich in areas of the test structures without line of sight to the source volume. We also considered Ti–W deposited into trench structures. Physically based, three dimensional deposition process simulations, assuming either diffuse or specular re‐emission of Ti, qualitatively explain the experimental results for these trenches. The available information is not sufficient to decide whether the Ti sticking factor is lower on Ti–W films or if Ti is resputtered by ...