Orientation Independent Growth of Uniform Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films on Silicon for High‐Density 3D Memory Applications
Orientation Independent Growth of Uniform Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films on Silicon for High‐Density 3D Memory Applications
复制标题
用于高密度 3D 存储器应用的硅上均匀铁电 Hf0.5Zr0.5O2 薄膜的方向独立生长
DOI：
10.1002/adfm.202209604
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发表时间：
2022
影响因子：
19
通讯作者：
Min Liao
中科院分区：
文献类型：
--
作者：
Chen Liu;Qijun Yang;Binjian Zeng;Yongquan Jiang;Shuaizhi Zheng;Jiajia Liao;Siwei Dai;Xiangli Zhong;Yichun Zhou;Min Liao
利用现有的硅技术可以很容易地将高度可扩展的铁电薄膜集成到铁电场效应晶体管(FeFET)中，被认为是快速读写、高能效和高密度非易失性存储器的候选材料之一。然而，由于铁电特性的不均匀引起的器件间阈值电压(VTH)的变化是在高密度非易失性存储器中实现基于Hafnia的FeFET的严峻挑战。本文利用HfO2种子层实现了Hf0.5Zr0.5O2(HZO)薄膜的均匀铁电性生长。HfO2种子层有利于改善不同取向硅衬底上生长的HZO薄膜的铁电极化，减小铁电性能的变化。此外，器件模拟证实了所提出的方案有助于实现三维垂直HZO基场效应晶体管的统一存储特性。这项研究建议将基于Hafnia的FeFET实现到3D垂直高密度存储器中。
The highly scalable ferroelectric hafnia‐based thin films can be easily integrated into ferroelectric field‐effect transistors (FeFETs) by existing Si technology, which are regarded as one of the promising candidates for fast read/write, energy‐efficient, and high‐density nonvolatile memories. However, device‐to‐device variation in threshold voltage (VTH) caused by non‐uniformity of ferroelectric properties is a serious challenge for implementing hafnia‐based FeFETs in high‐density nonvolatile memories. Here, the substrate‐orientation independent growth of Hf0.5Zr0.5O2(HZO) thin films is realized with uniform ferroelectricity by using HfO2seed layers. The HfO2seed layers are beneficial to improving the ferroelectric polarization of HZO thin films grown on differently oriented Si substrates and reducing the variation in ferroelectric properties. Moreover, device simulation confirms that the proposed scheme contributes to realizing uniform memory properties in 3D vertical HZO‐based FeFETs. This study suggests the possibility to implement hafnia‐based FeFETs into 3D vertical high‐density memory.