Control of epitaxy-induced magnetocrystalline anisotropy in a molecular beam epitaxy–grown Co∕MgO∕Fe∕MgO(100) pseudo-spin-valve
Control of epitaxy-induced magnetocrystalline anisotropy in a molecular beam epitaxy–grown Co∕MgO∕Fe∕MgO(100) pseudo-spin-valve
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分子束外延生长 Co∕MgO∕Fe∕MgO(100) 赝自旋阀中外延诱导磁晶各向异性的控制
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
M. E. Vickers
中科院分区：
文献类型：
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作者：
J.;A. Ionescu;T. Hayward;J. Llandro;J. Bland;M. E. Vickers
我们表明，通过获得一个晶体结构中的Co scinMgO scinFe隧道结，我们能够控制的自旋阀中的磁各向异性，因此，诱导独立切换的两个磁性层。原位和非原位结构表征证实，多层膜是完全外延的，具有光滑的界面。在确认的高品质的绝缘屏障，我们还提出了一个层选择性测量的磁化强度的顶部电极使用电流在平面运输测量。
We show that by obtaining a crystalline structure in a Co∕MgO∕Fe tunnel junction, we are able to control the magnetic anisotropies in the spin valve and therefore, induce independent switching of the two magnetic layers. In situ and ex situ structural characterization confirms that the multilayer is fully epitaxial, with smooth interfaces throughout. In confirmation of the high quality of the insulating barrier, we also present a layer-selective measurement of the magnetization of the top electrode using current-in-plane transport measurements.