Oblique nanomachining of gallium arsenide explained using AFM experiments and MD simulations
Oblique nanomachining of gallium arsenide explained using AFM experiments and MD simulations
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DOI：
10.1016/j.jmapro.2023.01.002
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发表时间：
2023-02-13
影响因子：
6.2
通讯作者：
Luo, Xichun
中科院分区：
文献类型：
--
作者：
Fan, Pengfei;Katiyar, Nirmal Kumar;Luo, Xichun
砷化镓（GaAs）仍然是一种非常重要的材料，因为它是生长量子点（QD）和广泛用于第五代（5G）无线通信网络的基于GaAs的量子器件的优选半导体衬底。在本文中，我们探讨了斜纳米加工的方面，调查加工质量的改善，以及了解塑性和传输现象，在GaAs中使用原子尺度的加工实验和模拟。我们研究了在GaAs表面生成过程中切割尖端的方向矢量（例如尖端对准）的影响。我们注意到一个新的观察，当AFM针尖的切割边缘呈现两个锐角时（即，每个30度角）（这可以被认为是倾斜切割条件），与其它尖端配置相比，该切割配置涉及早期的位错雪崩（例如，正交切割）。正交切削涉及最小的摩擦系数，但最高的比切削能量相比，斜切。高分辨透射电子显微镜（HRTEM）研究表明，由于110型位错在{111}滑移系上的滑移为GaAs纳米切割过程中的塑性铺平了道路。总体而言，斜角切割的特定条件被推断为是最好的纳米加工的高品质晶片使用AFM。
Gallium Arsenide (GaAs) continues to remain a material of significant importance due to being a preferred semiconductor substrate for the growth of quantum dots (QDs) and GaAs-based quantum devices used widely in fifth-generation (5G) wireless communication networks. In this paper, we explored aspects of oblique nanomachining to investigate the improvement in the machining quality as well as to understand plasticity and transport phenomena in GaAs using atomic scale machining experiments and simulations. We studied the influence of the direction vector of the cutting tip (e.g. tip alignment) during the surface generation process in GaAs. We noticed a novel observation that when the AFM tip's cutting edge presented two acute angles (i.e., 30 degrees angles each) between the cutting face and the cutting direction (which can be regarded as an oblique cutting condition), the cutting configuration involved early avalanche of dislocations compared to other tip configurations (e.g., orthogonal cutting). Orthogonal cutting involved the least coefficient of friction but the highest specific cutting energy compared to oblique cutting. High-resolution transmission electron microscopy (HRTEM) examination revealed that the shuffle-set slip on the {1 1 1} slip system due to the 1 1 0 type dislocation paves the way for plasticity during nanometric cutting of GaAs. Overall, a particular condition of oblique cutting was inferred to be the best for nanofabrication of high-quality wafers using an AFM.