Growth and structural characterization of epitaxial Cu/Nb multilayers
Growth and structural characterization of epitaxial Cu/Nb multilayers
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DOI：
10.1016/j.tsf.2010.12.077
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发表时间：
2011-04-29
期刊：
影响因子：
2.1
通讯作者：
Misra, A.
中科院分区：
文献类型：
--
作者：
Budiman, A. S.;Li, N.;Misra, A.
采用优化的电子束蒸发工艺在蓝宝石衬底上生长了高质量的外延Cu/Nb纳米多层膜。用X射线衍射峰的强度和宽度来衡量外延膜的质量，随着沉积温度的升高而提高。然而，较高的沉积温度也增加了夹层的倾向，最终导致具有多晶岛的多层膜的球化和生长。对沉积温度和沉积速率进行了优化，以获得最高质量的连续纳米层外延薄膜，适用于同步加速器劳厄微衍射仪中的原位变形实验。爱思唯尔出版公司(Elsevier B.V.)
Electron beam evaporation with optimized deposition parameters has been used to grow good quality epitaxial Cu/Nb nanoscale multilayered films on sapphire substrates. The quality of the epitaxial films, as measured by the intensities and widths of the X-ray diffraction peaks, increases with increasing deposition temperature. However, high deposition temperatures also enhance the tendency for layer pinch-off which eventually leads to spheroidization and growth of multilayer films with polycrystalline islands. Deposition temperatures and rates were optimized to produce the highest quality epitaxial films with continuous nanolayers, suitable for in situ deformation experiments in a synchrotron-based Laue micro-diffraction set up. Published by Elsevier B.V.