High‐Performance Spin Filters and Spin Field Effect Transistors Based on Bilayer VSe2
High‐Performance Spin Filters and Spin Field Effect Transistors Based on Bilayer VSe2
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DOI：
10.1002/adts.202000238
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发表时间：
2020-12
影响因子：
3.3
通讯作者：
Baochun Wu;R. Quhe;Jie Yang;Shiqi Liu;Jun-jie Shi;Jing Lu;H. Du
中科院分区：
文献类型：
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作者：
Baochun Wu;R. Quhe;Jie Yang;Shiqi Liu;Jun-jie Shi;Jing Lu;H. Du
Recently, two‐dimensional (2D) magnetic van der Waals materials have drawn great attention as they are remarkably promising in numerous vital areas, such as data storage and information processing. Theoretically, bilayer (BL) 2H‐VSe2 has been predicted to be an A‐type 2D antiferromagnetic van der Waals crystal (intralayer ferromagnetism and interlayer antiferromagnetism) and to have electrically‐induced half‐metallicity. Herein, by using ab initio quantum transport simulations, BL 2H‐VSe2 spin devices are designed and spin‐resolved transport properties are investigated for the first time. The spin‐filter efficiency (SFE) of the dual‐gated BL 2H‐VSe2 spin filter reaches up to 99%, and the conductance on‐off ratio of this device is up to 106. Also, the conductance on‐off ratio of the quadruple‐gated BL 2H‐VSe2 spin field effect transistor can reach 4 × 103 after reversing the spin direction. This work shows the high performance of the BL 2H‐VSe2 in spintronic devices and will motivate further studies of the spin devices based on this kind of material.
