The ammonia sensitivity of Pt/GaAs Schottky barrier diodes
The ammonia sensitivity of Pt/GaAs Schottky barrier diodes
复制标题
Pt/GaAs 肖特基势垒二极管的氨敏感性
DOI：
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发表时间：
1991
期刊：
影响因子：
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通讯作者：
F. Briones
中科院分区：
文献类型：
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作者：
L. Lechuga;A. Calle;D. Golmayo;F. Briones
本文介绍了一种新型氨气传感器。具有不连续铂膜的肖特基势阱器件Pt/n‐GaAs是宽温度范围（从室温到150°C）的氨气敏感探测器。研究了操作温度、催化金属膜厚度、背景气氛、外加电压偏置等参数对器件灵敏度的影响。此外，还研究了包括灵敏度限制、响应线性以及吸附和解吸动力学在内的重要特性。本文介绍了一种新型氨气传感器。具有不连续铂膜的肖特基势阱器件Pt/n‐GaAs是宽温度范围（从室温到150°C）的氨气敏感探测器。研究了操作温度、催化金属膜厚度、背景气氛、外加电压偏置等参数对器件灵敏度的影响。此外，还研究了包括灵敏度限制、响应线性以及吸附和解吸动力学在内的重要特性。
In this work a new ammonia gas sensor is presented. Schottky barrier devices, Pt/n‐GaAs, with discontinuous platinum films are sensitive detectors of ammonia gas in a wide temperature range (from room temperature to 150 °C). The effect of parameters such as operation temperature, thickness of the catalytic metal film, background atmosphere, and applied voltage bias on the device sensitivity are investigated. In addition, significant characteristics have been examined including sensitivity limits, linearity of response, and adsorption and desorption kinetics.In this work a new ammonia gas sensor is presented. Schottky barrier devices, Pt/n‐GaAs, with discontinuous platinum films are sensitive detectors of ammonia gas in a wide temperature range (from room temperature to 150 °C). The effect of parameters such as operation temperature, thickness of the catalytic metal film, background atmosphere, and applied voltage bias on the device sensitivity are investigated. In addition, significant characteristics have been examined including sensitivity limits, linearity of response, and adsorption and desorption kinetics.