Enhanced Piezoelectric Response due to Polarization Rotation in Cobalt‐Substituted BiFeO3 Epitaxial Thin Films
Enhanced Piezoelectric Response due to Polarization Rotation in Cobalt‐Substituted BiFeO3 Epitaxial Thin Films
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DOI：
10.1002/adma.201602450
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发表时间：
2016-10
影响因子：
29.4
通讯作者：
K. Shimizu;H. Hojo;Y. Ikuhara;M. Azuma
中科院分区：
文献类型：
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作者：
K. Shimizu;H. Hojo;Y. Ikuhara;M. Azuma
压电材料如PbZr_（1-x）Ti_xO_3在外加电场作用下产生的极化旋转通常被认为是其大的压电响应的来源。在这里，高品质的钴取代的BiFeO 3外延薄膜的压电响应与单斜畸变进行了系统的研究。结果表明，极化旋转起着至关重要的作用，在改善这种材料的压电响应。
Polarization rotation induced by an external electric field in piezoelectric materials such as PbZr1-x Tix O3 is generally regarded as the origin of their large piezoelectric responses. Here, the piezoelectric responses of high-quality cobalt-substituted BiFeO3 epitaxial thin films with monoclinic distortions are systematically examined. It is demonstrated that polarization rotation plays a crucial role in improving the piezoelectric responses in this material.