Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper.
Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper.
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钌原子层沉积与 TiN 接口，用于超越铜的 10 纳米以下高级互连。
DOI：
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发表时间：
2016
影响因子：
9.5
通讯作者：
C. Adelmann
中科院分区：
文献类型：
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作者：
L. Wen;P. Roussel;O. Pedreira;B. Briggs;B. Groven;S. Dutta;M. Popovici;N. Heylen;I. Ciofi;K. Vanstreels;F. W. Østerberg;O. Hansen;D. H. Petersen;K. Opsomer;Christophe Detavernie;Christopher J. Wilson;S. Elshocht;K. Croes;J. Bömmels;Z. Tokei;C. Adelmann
研究了钌原子层沉积作为未来亚10nm互连技术节点的无障碍金属化解决方案。我们演示了采用ALD工艺结合2.5 Å的ALD TiN界面和沉积后退火，在10 nm以下宽的单damascene线中实现无空隙填充。在如此小的尺寸下，钌的有效电阻比Cu/势垒系统的有效电阻对结垢的依赖更小。根据先进技术节点的半经验互连电阻模型，钌的有效电阻在14 nm和10 nm处潜在地穿过Cu曲线。这些极细尺度的钌线表现出优异的电迁移行为。随时间变化的介电击穿测量显示，在高达200°C的低κ介电体中，钌离子漂移可以忽略不计，这表明钌可以用作互连中的无障碍金属化。这些结果表明，钌作为铜的替代品作为未来技术节点的金属化解决方案是非常有前途的。
Atomic layer deposition of ruthenium is studied as a barrierless metallization solution for future sub-10 nm interconnect technology nodes. We demonstrate the void-free filling in sub-10 nm wide single damascene lines using an ALD process in combination with 2.5 Å of ALD TiN interface and postdeposition annealing. At such small dimensions, the ruthenium effective resistance depends less on the scaling than that of Cu/barrier systems. Ruthenium effective resistance potentially crosses the Cu curve at 14 and 10 nm according to the semiempirical interconnect resistance model for advanced technology nodes. These extremely scaled ruthenium lines show excellent electromigration behavior. Time-dependent dielectric breakdown measurements reveal negligible ruthenium ion drift into low-κ dielectrics up to 200 °C, demonstrating that ruthenium can be used as a barrierless metallization in interconnects. These results indicate that ruthenium is highly promising as a replacement to Cu as the metallization solution for future technology nodes.