Effect of heavy boron doping on pressure-induced phase transitions in single-crystal silicon
Effect of heavy boron doping on pressure-induced phase transitions in single-crystal silicon
复制标题
DOI：
10.1063/1.2120920
复制
发表时间：
2005-11
影响因子：
4
通讯作者：
X. Yan;Xinming Huang;S. Uda;Mingwei Chen
中科院分区：
文献类型：
--
作者：
X. Yan;Xinming Huang;S. Uda;Mingwei Chen
系统地研究了外加载荷和加载/卸载速率对轻掺和重掺硼硅压致相变的影响。将所得到的相绘制成以施加的载荷和加载/卸载速率为坐标轴的二维图。发现重掺硼硅中非晶相的形成区域远大于轻掺硼硅中的非晶相的形成区域，表明重掺硼促进了硅中的非晶化。
The influence of applied loads and loading/unloading rates on pressure-induced phase transitions in lightly and heavily boron-doped silicon was systematically investigated. The resultant phases were plotted into two-dimensional maps with applied loads and loading/unloading rates as the coordinate axes. The formation region of the amorphous phase in the heavily boron-doped silicon was found to be much larger than that in the lightly boron-doped one, suggesting that heavy boron doping promotes the amorphization in silicon.