The effect of grain boundaries on instability at the crystal/melt interface during the unidirectional growth of Si
The effect of grain boundaries on instability at the crystal/melt interface during the unidirectional growth of Si
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DOI：
10.1016/j.mtla.2019.100386
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发表时间：
2019-09
期刊：
影响因子：
3.4
通讯作者：
Kuan-Kan Hu;K. Maeda;Keiji Shiga;H. Morito;K. Fujiwara
中科院分区：
文献类型：
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作者：
Kuan-Kan Hu;K. Maeda;Keiji Shiga;H. Morito;K. Fujiwara
