Deep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure
Deep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure
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DOI：
10.1126/science.1144216
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发表时间：
2007-08-17
期刊：
影响因子：
56.9
通讯作者：
Taniguchi, Takashi
中科院分区：
文献类型：
--
作者：
Kubota, Yoichi;Watanabe, Kenji;Taniguchi, Takashi
在200纳米左右的深紫外区域发光的材料在信息存储技术、环境保护和医疗等广泛应用中都是必不可少的。六方氮化硼（hBN）是近年来发现的一种很有前途的深紫外光发射体，传统上是在高压和高温下合成的。利用镍钼溶剂，在常压下成功地合成了高纯度的hBN晶体。所得的hBN晶体在室温下发出强烈的215纳米发光。这项研究展示了一种更简单的方法来生长高质量的hBN晶体，通过在常压下在衬底上进行液相沉积。
Materials emitting light in the deep ultraviolet region around 200 nanometers are essential in a wide-range of applications, such as information storage technology, environmental protection, and medical treatment. Hexagonal boron nitride (hBN), which was recently found to be a promising deep ultraviolet light emitter, has traditionally been synthesized under high pressure and at high temperature. We successfully synthesized high-purity hBN crystals at atmospheric pressure by using a nickel-molybdenum solvent. The obtained hBN crystals emitted intense 215-nanometer luminescence at room temperature. This study demonstrates an easier way to grow high-quality hBN crystals, through their liquid-phase deposition on a substrate at atmospheric pressure.