Effect of template layer on formation of flat-surface β-FeSi2 epitaxial films on (111) Si by metal-organic chemical vapor deposition
Effect of template layer on formation of flat-surface β-FeSi2 epitaxial films on (111) Si by metal-organic chemical vapor deposition
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DOI：
10.1016/j.jcrysgro.2005.10.111
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发表时间：
2006-03-15
影响因子：
1.8
通讯作者：
Funakubo, H
中科院分区：
文献类型：
--
作者：
Akiyama, K;Hirabayashi, Y;Funakubo, H
采用金属有机化学气相沉积（MOCVD）方法，在（111）Si衬底上成功地生长了具有连续、平整表面的（101）和（110）-β-FeSi_2外延薄膜。均匀的晶粒生长是平坦表面膜生长的关键因素，并且通过使用具有高初始核密度的β-FeSi 2模板层来实现。在50 nm厚的模板上生长的膜在MOCVD过度生长后保持强的（101）和/或（110）取向，并且具有0.59度的摇摆曲线半峰全宽（FWHM）。对于在50 nm厚的模板上生长的250 nm厚的膜，平均粗糙度为16 nm。(c)2005 Elsevier B. V.保留所有权利。
Epitaxial (101)- and/or (110)-beta-FeSi2 films with a continuous, flat surface were successfully grown on (111) Si substrates by metalorganic chemical vapor deposition (MOCVD) using a template layer. Homogeneous grain growth is a key factor in the growth of flat-surface films and was achieved by using a beta-FeSi2 template layer with a high initial nuclear density. Films grown on 50-nm-thick templates maintained a strong (101)- and/or (110)-orientation after MOCVD overgrowth and had a rocking curve full-width at half-maximum (FWHM) of 0.59 degrees. The average roughness was 16 run for 250-nm-thick film grown on a 50-nm-thick template. (c) 2005 Elsevier B.V. All rights reserved.