Effects of rapid thermal annealing on the optical properties of InAs/(In)GaAs quantum dots with different areal density
Effects of rapid thermal annealing on the optical properties of InAs/(In)GaAs quantum dots with different areal density
复制标题
快速热退火对不同面密度InAs/(In)GaAs量子点光学性能的影响
DOI：
10.1016/j.ijleo.2013.10.013
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发表时间：
2014
期刊：
影响因子：
3.1
通讯作者：
Li Lian-He
中科院分区：
文献类型：
--
作者：
Li Zhan-Guo;You Ming-hui;Liu Guo-Jun;Gao Xin;Li Lin;Wang Yong;Li Lian-He
利用光致发光（PL）技术研究了快速热退火对不同面密度的InAs/（In）GaAs量子点光学性质的影响。退火导致发光峰能量蓝移，这强烈依赖于量子点的面密度和覆盖层。值得注意的是，低密度量子点和/或InGaAs-capped量子点对退火更敏感。我们属性从这些样品的更大的能量蓝移，以增强应变驱动的扩散和/或缺陷辅助扩散。
The effects of rapid thermal annealing on the optical properties of InAs/(In)GaAs quantum dots (QDs) with different areal density were investigated by photoluminescence (PL) measurement. The annealing results in PL peak energy blue-shift which strongly depends on QD areal density and capping layer. It is noticeable that low-density QDs and/or InGaAs-capped QDs are more sensitive to the annealing. We attribute the larger energy blue-shift from these samples to enhanced strain-driven diffusion and/or defect-assisted diffusion.