Novel topological insulator phase induced by proximity effects at the interface between a topological band insulator and a Mott insulator: A layer DMFT approach
Novel topological insulator phase induced by proximity effects at the interface between a topological band insulator and a Mott insulator: A layer DMFT approach
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拓扑带绝缘体和莫特绝缘体之间界面的邻近效应引起的新型拓扑绝缘体相位：层 DMFT 方法
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
A. Liebsch
中科院分区：
文献类型：
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作者：
H. Ishida;A. Liebsch
