High-sensitivity charge detection using antisymmetric vibration in coupled micromechanical oscillators
High-sensitivity charge detection using antisymmetric vibration in coupled micromechanical oscillators
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DOI：
10.1063/1.3541959
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发表时间：
2011-01-03
影响因子：
4
通讯作者：
Yamaguchi, Hiroshi
中科院分区：
文献类型：
--
作者：
Okamoto, Hajime;Kitajima, Norihito;Yamaguchi, Hiroshi
利用耦合GaAs振荡器中的反对称振动实现了高灵敏度的电荷检测。在两个振荡器的同相同时驱动下的反对称模式随着完美的频率调谐而消失。小的栅电压调制引起的压电应力打破了两个振荡器的平衡，导致反对称模式的重新出现。幅度变化的测量使得能够检测所施加的电压或等效地检测所添加的电荷。与使用单个振荡器的频移检测相比，我们的方法允许大的读出到强驱动的非线性响应制度，提供147 e/Hz（0.5）的高室温灵敏度。(C)2011年美国物理学会。[doi：10.1063/1.3541959]
High-sensitivity charge detection using antisymmetric vibration in two coupled GaAs oscillators is demonstrated. The antisymmetric mode under in-phase simultaneous driving of the two oscillators disappears with perfect frequency tuning. The piezoelectric stress induced by a small gate-voltage modulation breaks the balance of the two oscillators, leading to the re-emergence of the antisymmetric mode. Measurement of the amplitude change enables detection of the applied voltage or, equivalently, added charges. In contrast to the frequency-shift detection using a single oscillator, our method allows a large readout up to the strongly driven nonlinear response regime, providing the high room-temperature sensitivity of 147 e/Hz(0.5). (C) 2011 American Institute of Physics. [doi:10.1063/1.3541959]