Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)
Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)
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DOI：
10.1016/j.jcrysgro.2004.05.114
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发表时间：
2004-09
影响因子：
1.8
通讯作者：
Jian‐Ping Zhou;Chunlin Chai;Shao-yan Yang;Zhi-kai Liu;Shu-lin Song;Yan-Li Li-Yan-Li-Li-47001646;N. Chen
中科院分区：
文献类型：
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作者：
Jian‐Ping Zhou;Chunlin Chai;Shao-yan Yang;Zhi-kai Liu;Shu-lin Song;Yan-Li Li-Yan-Li-Li-47001646;N. Chen
