Composite system based on CdSe/ZnS quantum dots and GaAs nanowires
Composite system based on CdSe/ZnS quantum dots and GaAs nanowires
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DOI：
10.1134/s106378261310014x
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发表时间：
2013-10-01
期刊：
影响因子：
0.7
通讯作者：
Cirlin, G. E.
中科院分区：
文献类型：
--
作者：
Khrebtov, A. I.;Talalaev, V. G.;Cirlin, G. E.
利用电子显微镜和光致发光光谱技术研究了胶体CdSe/ZnS量子点和GaAs纳米线复合体系的结构和发光特性。纳米线阵列的良好润湿性和发达的表面导致量子点的表面密度的增加，因此，在600 nm波长区域中的系统的发光度。量子点的光致发光光谱在10-295 K的整个范围内表现出良好的温度稳定性。讨论了表面态对量子点能量弛豫的影响以及激子态在量子点辐射复合中的作用。
The possibility of fabricating a composite system based on colloidal CdSe/ZnS quantum dots and GaAs nanowires is demonstrated and the structural and emission properties of this system are investigated by electron microscopy and photoluminescence spectroscopy techniques. The good wettability and developed surface of the nanowire array lead to an increase in the surface density of quantum dots and, as a consequence, in the luminosity of the system in the 600-nm wavelength region. The photoluminescence spectrum of the quantum dots exhibits good temperature stability in the entire range 10-295 K. The impact of surface states on energy relaxation and the role of exciton states in radiative recombination in the quantum dots are discussed.