A 281-nW 43.3 fJ/conversion-step 8-ENOB 25-kS/s asynchronous SAR ADC in 65nm CMOS for biomedical applications
A 281-nW 43.3 fJ/conversion-step 8-ENOB 25-kS/s asynchronous SAR ADC in 65nm CMOS for biomedical applications
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采用 65nm CMOS 的 281nW 43.3 fJ/转换步 8-ENOB 25kS/s 异步 SAR ADC,适用于生物医学应用
DOI:
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发表时间:
2013
期刊:
影响因子:
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通讯作者:
Y. Y. Lam
中科院分区:
文献类型:
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作者:
C. Yuan;Y. Y. Lam
This paper describes a low-power 25-kS/s successive approximation register (SAR) analog-to-digital converter (ADC) for biomedical applications. The ADC employs a novel low-energy and area-efficient tri-level switching scheme in the DAC. Compared to the conventional SAR ADC, the average switching energy and total capacitance are reduced by 97% and 75%, respectively. Asynchronous design is implemented to eliminate the conventional system clock which is N-time of sampling rate. Furthermore, a delay-based internal clock generator produces a high-speed signal which allows True Single Phase Clock (TSPC) D Flip-flop (DFF) to be used in the low-speed biomedical applications. The ADC can work between 0 to 1 MS/s. The prototype ADC fabricated in UMC 65 nm 1P6M CMOS achieves best performance at 25 kS/s with 50.1 dB SNDR and 55.3 dB SFDR. Operating at 1 V supply and 25 kS/s, the ADC consumes 281 nW and exhibits a FOM of 43.3 fJ/conversion-step. The chip die area is 145 μm × 120 μm.