Comparative study of reliability degradation behaviors of LDMOS and LDMOS-SCR ESD protection devices
Comparative study of reliability degradation behaviors of LDMOS and LDMOS-SCR ESD protection devices
复制标题
DOI:
10.1016/j.microrel.2015.12.024
复制
发表时间:
2016-06
期刊:
影响因子:
--
通讯作者:
Zhihui Yu;Hao Jin;S. Dong;H. Wong;J. Zeng;Weihuai Wang
中科院分区:
文献类型:
--
作者:
Zhihui Yu;Hao Jin;S. Dong;H. Wong;J. Zeng;Weihuai Wang