Comparative study of reliability degradation behaviors of LDMOS and LDMOS-SCR ESD protection devices

Comparative study of reliability degradation behaviors of LDMOS and LDMOS-SCR ESD protection devices
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DOI:
10.1016/j.microrel.2015.12.024
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发表时间:
2016-06
期刊:
Microelectron. Reliab.
影响因子:
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通讯作者:
Zhihui Yu;Hao Jin;S. Dong;H. Wong;J. Zeng;Weihuai Wang
Zhihui Yu;Hao Jin;S. Dong;H. Wong;J. Zeng;Weihuai Wang
中科院分区:
其他
文献类型:
--
作者:
Zhihui Yu;Hao Jin;S. Dong;H. Wong;J. Zeng;Weihuai Wang

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