Oxidation of Copper between 250° and 450°C and the Growth of CuO “Whiskers”
Oxidation of Copper between 250° and 450°C and the Growth of CuO “Whiskers”
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250° 至 450°C 期间铜的氧化以及 CuO“晶须”的生长
DOI：
10.1149/1.2428024
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发表时间：
1961
影响因子：
3.9
通讯作者：
K. Andrew
中科院分区：
文献类型：
--
作者：
E. A. Gulbransen;T. P. Copan;K. Andrew
许多研究者已经发现在铜上生长出薄的氧化晶须。这些生长与氧化机理和氧化动力学变化的关系尚待确定。为了回答这些问题，对铜的氧化进行了研究，用真空微天平法测定了反应动力学，用x射线和电子衍射法研究了氧化物的晶体结构，用高分辨率电子显微镜测定了氧化晶须的尺寸和表面密度。结果表明，在反应250~ 450 h时，铜的氧化遵循立方速率规律，在反应250~ 6 h时形成小的胚须。氧化6h后，在450~ 6h处，氧化晶须的表面密度为108/ cm2。在450~时，少于1%的氧与金属发生反应，导致氧化晶须的生长。根据三次速率定律图和对晶须尺寸和密度的分析，我们得出结论，氧化晶须的形成虽然是一种非常有趣的自然现象，但对氧化过程的动力学没有明显的影响。
Thin oxide whiskers have been found to grow on copper by a number of investigators. The relation of these growths to the mechanism of oxidation and to changes in the kinetics of oxidation remains to be established. To answer these questions a study was made of the oxidation of copper using the vacuum microbalance method to determine the kinetics of reaction, x-ray and electron diffraction methods for study of the oxide crystal structures, and a high resolution electron microscope to determine the size and surface density of the oxide whiskers.The results show that the oxidation of copper follows the cubic rate law between 250 and 450~ Small embryonic whiskers are formed at 250~ and 6 hr of reaction. A surface density of 108/cm 2 of long thin oxide whiskers was found at 450~ after 6 hr of oxidation. Less than 1% of the oxygen reacting with the metal at 450~ resulted in the growth of oxide whiskers. We conclude on the basis of the cubic rate law plots and analyses of the whiskers size and density that the formation of oxide whiskers, although of great interest as a natural phenomena, had no appreciable effect on the kinetics of the oxidation process.