A statistical model of sputtering

A statistical model of sputtering
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溅射统计模型

DOI:
10.1063/1.326603
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发表时间:
1979
影响因子:
3.2
通讯作者:
C. R. Helms
C. R. Helms
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
S. Schwarz;C. R. Helms

文献摘要

被引文献

相似文献

描述了基于简单几何考虑的溅射基本统计模型。导出了一个有用的相对溅射产率方程,该方程可以准确预测离子能量、质量和入射角在这些参数的广泛范围内的变化。还推导出绝对溅射产率的经验关系。与文献中的实验和理论工作进行了一些比较。
An elementary statistical model of sputtering based on simple geometrical considerations is described. A useful equation for relative sputtering yields is derived which accurately predicts variations with ion energy, mass, and incident angle over a broad range of these parameters. An empirical relation for the absolute sputtering yields is also deduced. Several comparisons are made to experimental and theoretical work in the literature.