Role of different scattering mechanisms on the temperature dependence of transport in graphene
Role of different scattering mechanisms on the temperature dependence of transport in graphene
复制标题
不同散射机制对石墨烯输运温度依赖性的作用
作者：
S. Sarkar;Kazi Rafsanjani Amin;Ranjan Modak;Amandeep Singh;S. Mukerjee;A. Bid
详细的实验和理论研究的温度依赖性的不同的散射机制对石墨烯器件的电输运性质的影响。我们发现，高迁移率器件的输运性质主要是由完全屏蔽的短程杂质散射。另一方面，对于低迁移率器件，传输特性由两种类型的散射电势确定-由于电离杂质的长范围和由于完全屏蔽的带电杂质的短范围。结果可以解释的玻尔兹曼输运方程的框架内涉及两个独立的散射机制。
Detailed experimental and theoretical studies of the temperature dependence of the effect of different scattering mechanisms on electrical transport properties of graphene devices are presented. We find that for high mobility devices the transport properties are mainly governed by completely screened short range impurity scattering. On the other hand, for the low mobility devices transport properties are determined by both types of scattering potentials - long range due to ionized impurities and short range due to completely screened charged impurities. The results could be explained in the framework of Boltzmann transport equations involving the two independent scattering mechanisms.