Integrated all-photonic non-volatile multi-level memory
Integrated all-photonic non-volatile multi-level memory
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DOI：
10.1038/nphoton.2015.182
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发表时间：
2015-11-01
期刊：
影响因子：
35
通讯作者：
Pernice, Wolfram H. P.
中科院分区：
文献类型：
--
作者：
Rios, Carlos;Stegmaier, Matthias;Pernice, Wolfram H. P.
在芯片上实现非易失性光子存储器一直是一个长期但难以实现的目标。光子数据存储将通过减少与电存储器相关的延迟以及有可能消除光电转换，极大地提高现有计算架构的性能。此外，具有随机存取功能的多级光子存储器将能够利用更强大的计算能力。然而，到目前为止光子存储器都是易失性的。在此，我们展示了一种基于相变材料的稳健的、非易失性的全光子存储器。通过利用光学近场效应，我们在单个器件中实现了多达八个级别的位存储，并且该器件能在中间状态之间轻松切换。我们的芯片上存储单元具有单次读出功能，在接近1吉赫兹的速度下切换能量低至13.4皮焦。我们表明，可以使用波长复用方案对单个存储元件进行寻址。我们的多级、多位器件为消除冯·诺依曼瓶颈提供了一条途径，并预示着全光子存储和非常规计算的一种新范式。
Implementing on-chip non-volatile photonic memories has been a long-term, yet elusive goal. Photonic data storage would dramatically improve performance in existing computing architectures(1) by reducing the latencies associated with electrical memories(2) and potentially eliminating optoelectronic conversions(3). Furthermore, multi-level photonic memories with random access would allow for leveraging even greater computational capability(4-6). However, photonic memories(3,7-10) have thus far been volatile. Here, we demonstrate a robust, nonvolatile, all-photonic memory based on phase-change materials. By using optical near-field effects, we realize bit storage of up to eight levels in a single device that readily switches between intermediate states. Our on-chip memory cells feature single-shot readout and switching energies as low as 13.4 pJ at speeds approaching 1 GHz. We show that individual memory elements can be addressed using a wavelength multiplexing scheme. Our multi-level, multi-bit devices provide a pathway towards eliminating the von Neumann bottleneck and portend a new paradigm in all-photonic memory and non-conventional computing.