Effect of Tin Additive on Indium Thin‐Film Superconducting Transmission Lines
Effect of Tin Additive on Indium Thin‐Film Superconducting Transmission Lines
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DOI：
10.1063/1.1659663
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发表时间：
1971
影响因子：
3.2
通讯作者：
P. Mason
中科院分区：
文献类型：
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作者：
P. Mason
我们报道了在薄膜/氧化钽/块状钽传输线的铟薄膜中添加高达23%的TiN的效果。TiN的加入降低了速度，每增加1%的TiN，定长延时增加1.4%。当平均自由路径减少时，与皮帕德的非局域理论的预测很好地吻合。TiN的加入不会增加脉冲衰减和形状退化。在1.25K下观察到了低至10db/微秒的延迟衰减，添加TiN使速度对T_c附近温度的敏感度降低了50%，并提高了线到线速度的重复性。23%TiN的临界温度提高到6K，与以前的测量结果一致。
We report the effect of adding up to 23% tin to the indium film of a thin‐film/tantalum‐oxide/bulktantalum transmission line. Addition of tin reduces the velocity and increases the delay for fixed length by 1.4% for each percent of tin. Agreement with the predictions of Pippard's nonlocal theory when meanfree path is reduced is excellent. Pulse attenuation and shape degradation are not increased by addition of tin. Attenuation as low as 10 dB per microsecond of delay was observed at 1.25 K. The added tin reduces by 50% the sensitivity of velocity to temperature near Tc, and improves the reproducibility of velocity from line to line. Critical temperature is increased to 6 K for 23% tin, in good agreement with previous measurements.