Combining plasma profiling TOFMS with TOF-SIMS depth profiling for microelectronic applications
Combining plasma profiling TOFMS with TOF-SIMS depth profiling for microelectronic applications
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将等离子体分析 TOFMS 与 TOF-SIMS 深度分析相结合，用于微电子应用
DOI：
10.1116/1.4943513
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
E. Nolot
中科院分区：
文献类型：
--
作者：
A. Tempez;S. Legendre;J. Barnes;E. Nolot
飞行时间二次离子质谱 (TOF-SIMS) 通常用于微电子材料的深度分析，但结果的解释有时会受到基质效应等人为因素的阻碍。等离子体分析飞行时间质谱 (PP-TOFMS) 可直接测量材料元素组成与深度的关系，具有纳米分辨率和比 TOF-SIMS 更高的溅射速率。此处，在用于微电子应用的一系列多层上对这两种技术进行了比较。尽管 PP-TOFMS 剖面的深度分辨率和灵敏度较低，但这两种技术都能够确定成分、检测污染并将扩散表征为退火的函数。事实上，在同一样品上使用这两种技术是互补的：(1) 在大多数情况下，可以使用离子束比轻松地对 PP-TOFMS 谱进行半定量，而 SIMS 分析需要标准品，以及 (2) 更简单的 PP-TOFMS 质谱，具有 l...
Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is routinely used for depth profiling of microelectronic materials but interpretation of results can sometimes be hampered by artifacts such as matrix effects. Plasma profiling time-of-flight mass spectrometry (PP-TOFMS) provides direct measurement of the elemental composition of materials as a function of depth, with nanometer resolution and higher sputter rates than for TOF-SIMS. Here, the two techniques are compared on a range of multilayers used for microelectronic applications. Although depth resolution and sensitivity are less in the PP-TOFMS profiles, both techniques were able to determine the composition, detect contamination, and characterize diffusion as a function of annealing. Indeed, the use of both techniques on the same sample is complementary: (1) the PP-TOFMS profiles can be in most cases easily semiquantified using the ion beam ratio, whereas standards are required for the SIMS analysis and (2) simpler PP-TOFMS mass spectra with l...