Dielectric response of nano aluminium tri-hydrate filled silicone rubber
Dielectric response of nano aluminium tri-hydrate filled silicone rubber
复制标题
DOI：
10.1016/j.compscitech.2018.04.002
复制
发表时间：
2018-04
影响因子：
9.1
通讯作者：
Chao Wu;Xidong Liang;L. Dissado;N. Chalashkanov;S. Dodd;Yanfeng Gao;Sen Xu
中科院分区：
文献类型：
--
作者：
Chao Wu;Xidong Liang;L. Dissado;N. Chalashkanov;S. Dodd;Yanfeng Gao;Sen Xu
在10− 4 ~ 103 Hz频率范围内研究了纳米氢氧化铝（Aluminium Tri-hydrate，ATH）填充硅橡胶的介电响应，并与微米氢氧化铝填充硅橡胶的介电响应进行了比较。等效电路已被用来分解为：损耗峰过程，准直流（Q-DC）过程，直流电导和恒定的高频电容的介电响应。发现Q-DC和损耗峰是ATH填料的结果，其中损耗峰在纳米ATH填充的材料中比在微ATH材料中更清楚地分辨，在微ATH材料中损耗峰较弱并且部分地被Q-DC过程掩盖。与微米氢氧化铝材料相比，纳米氢氧化铝填充样品的所有介电响应的特征频率具有相同的激活能。分别从纳米ATH团簇间的长程输运和孤立团簇的偶极行为两个方面讨论了Q-DC过程和损耗峰的物理机制。
The dielectric response of a nano-ATH (Aluminium Tri-hydrate) filled silicone rubber is investigated over the frequency range 10−4to 103Hz and compared with that of the micro-ATH composite. An equivalent circuit has been used to decompose the dielectric response into: a loss peak process, a quasi-dc (Q-DC) process, a dc-conductance and constant high frequency capacitance. It was found that the Q-DC and loss peak were a result of the ATH filler with the loss peak more clearly resolved in the nano-ATH filled material than in the micro-ATH material where it is weaker and partly obscured by the Q-DC process. In contrast to the micro-ATH material the characteristic frequencies of all the dielectric responses in the nano-ATH filled samples have the same activation energy. The physical mechanisms of the Q-DC process and loss peak are discussed in terms of long range transport between nano-ATH clusters and the dipolar behaviour of isolated clusters respectively.