Highly temperature-tolerant p-type carbon nanotube transistor doped with 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile
Highly temperature-tolerant p-type carbon nanotube transistor doped with 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile
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DOI：
10.1063/5.0087868
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发表时间：
2022-04-01
期刊：
影响因子：
1.6
通讯作者：
Omachi, Haruka
中科院分区：
文献类型：
--
作者：
Matsunaga, Yuki;Hirotani, Jun;Omachi, Haruka
碳纳米管的化学掺杂方法的发展对于各种电子应用是必不可少的。然而，用于CNT薄膜晶体管（TFT）的典型p掺杂方法，使用来自大气的氧气和水，对周围环境的变化非常敏感，因此，它们差的温度耐受性是器件制造期间的关键问题。作为用于CNT-TFT的p型掺杂剂，我们使用1，4，5，8，9，11-六氮杂三亚苯基六腈（HATCN），其是强电子受体芳族化合物。HATCN掺杂的CNT-TFT在暴露于200摄氏度的高温环境后表现出p型特性，并且长时间加热不会降低HATCN的p掺杂性能。此外，通过用聚对二甲苯-Al 2 O3双层封装器件的表面，即使在环境条件下也获得稳定的p型特性。(C)2022年作者。除非另有说明，否则所有文章内容均根据知识共享署名（CC BY）许可证（http：//creativecommons.org/licenses/by/4.0/）进行许可。
The development of chemical doping methods for carbon nanotubes (CNTs) is essential for various electronic applications. However, typical p-doping methods for CNT thin-film transistors (TFTs), using oxygen and water from the atmosphere, are quite sensitive to changes in the surrounding environment, and thus, their poor temperature tolerance is a critical problem during device fabrication. As a p-dopant for CNT-TFTs, we used 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile (HATCN), which is a strong electron acceptor aromatic compound. The HATCN-doped CNT-TFTs exhibited p-type characteristics after exposure to a high-temperature environment of 200 degrees C, and prolonged heating did not degrade the p-doping performance of HATCN. In addition, stable p-type characteristics even under ambient conditions were obtained by encapsulating the surface of the device with a Parylene-Al2O3 bilayer. (C) 2022 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).