Thermal Management of Nanoelectronics and 3-d Electronics. Thermal Challenges at Nanoscale Graphene as a Thermal Management Material

Thermal Management of Nanoelectronics and 3-d Electronics. Thermal Challenges at Nanoscale Graphene as a Thermal Management Material
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纳米电子学和 3D 电子学的热管理。

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发表时间:
2011
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通讯作者:
A. Balandin
A. Balandin
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作者:
A. Balandin

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众所周知,采用纳米尺寸晶体管的最先进集成电路(ic)的功耗和散热是一个紧迫的挑战。电子工业向多核设计的过渡,其中性能的提高不是通过增加时钟频率,而是通过增加处理器的数量来实现的,这有助于缓解一些热问题,但没有解决计算机芯片内部热量分布不均匀的问题。后者导致热流密度超过500w /cm的热点出现。与耗散功率密度增加有关的问题在光电和光子器件中也遇到过。当材料的结构达到纳米尺度时,其导热能力会恶化,这使得热问题变得更加复杂。由于这些原因,不仅在封装层面,而且在纳米级材料和器件层面,热管理都必须得到改进。在器件结构层面缓解自热问题的方法之一是在芯片设计中加入具有非常高导热性的材料,即高热流通量热管理方法。这些导热材料可用于构建器件通道或自身互连,也可与传统电子材料一起用作散热片。利用这些高导热材料作为新型填料,可望改善热界面材料(TIMs)的性能。另一种方法是使用固态热电现场冷却,这需要高效的热电材料,可以与集成电路材料集成。液体冷却也可能在未来的热管理技术中扮演更重要的角色。
IIT IS WELL RECOGNIZED THAT POWER CONSUMPtion and heat removal in state-of-the-art integrated circuits (ICs) with the nanometer size of transistors is an urgent challenge. The electronic industry’s transition to multicore designs, where the performance increase is achieved not via the increase in the clock frequency but rather through the increase in the number of processors, helped to alleviate some of the thermal issues but has not solved the problem of the nonuniformity of heat distribution inside a computer chip. The latter results in appearances of hot spots with heat fluxes exceeding 500 W/cm. The problems associated with the increased dissipated power densities have been encountered in optoelectronic and photonic devices as well. The thermal issues are further complicated by the fact that the material’s ability to conduct heat deteriorates when it is structured at the nanometer scale [1]. For these reasons, thermal management has to be improved not only at the packaging level but also at the nanoscale materials and device levels. THERMAL CHALLENGES AT NANOSCALE One of the approaches to mitigate the self-heating problem at the device-structure level is to incorporate materials with very high thermal conductivity into the chip design, i.e., the high-heat flux thermalmanagement approach. These thermally conductivematerials can be used to build either the device channel or interconnects themselves, or can be utilized as heat spreaders together with conventional electronic materials. It is also expected that improvements in thermal interface materials (TIMs) can be made by the utilization of these highly thermally conductive materials as new fillers. Another approach is to use solid-state thermoelectric onspot cooling, requiring efficient thermoelectric materials that can be integrated with the ICmaterials. Liquid coolingmay also play a more important role in future thermalmanagement technology.