Self-stabilizing molecular solution for Cu2SnS3 thin film: An insight into the oxidation inhibitor of bivalent tin ion
Self-stabilizing molecular solution for Cu2SnS3 thin film: An insight into the oxidation inhibitor of bivalent tin ion
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DOI:
10.1016/j.jpowsour.2021.229699
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发表时间:
2021-05
影响因子:
9.2
通讯作者:
M. Yang;Xiao-Juan Huang;L. Yao;Limei Lin;Aicheng Chen;Yongqing Chen;Yuliang Che;Shuiyuan Chen-Shuiyuan-C
中科院分区:
文献类型:
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作者:
M. Yang;Xiao-Juan Huang;L. Yao;Limei Lin;Aicheng Chen;Yongqing Chen;Yuliang Che;Shuiyuan Chen-Shuiyuan-C
Molecular solution with the metal-thiourea complex is a facile and effective route for Cu2SnS3(CTS) thin film deposition. However, its stability is still challenging due to flexible metal salts precursors. Here we report a strategy to enhance the stability of the Cu–Sn–S molecular solution that use bivalent Sn to suppress the oxidation of the S2-of thiourea via the redox reaction. The self-stabilizing mechanism has been carefully revealed by the systematic experiments and confirmed by the spontaneous reaction process of metal-thiourea system. It demonstrates that Sn with a low valence state weakens the transfer of lone pair electrons from thiourea to Cu2+and Sn4+ions, alleviating the sulfur precipitates from thiourea oxidation because of the easily reducible character of Sn2+ion. The solution with Sn2+antioxidant additive can be stored for a long time under air ambient, which is then spin-coated and sulfurized with Sn powder compensation. The uniform CTS thin film with composition control is finally achieved and delivers a device efficiency of 1.15%. This work provides a guide on stabilizing the solution precursor for chalcogenide thin film deposition.