Formation of Q-carbon with wafer scale integration
Formation of Q-carbon with wafer scale integration
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通过晶圆级集成形成 Q-carbon
DOI：
10.1016/j.carbon.2022.06.003
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发表时间：
2022
期刊：
影响因子：
10.9
通讯作者：
Narayan, Jagdish
中科院分区：
文献类型：
--
作者：
Riley, Parand R.;Joshi, Pratik;Khosla, Nayna;Narayan, Roger J.;Narayan, Jagdish
我们描述了通过等离子体增强化学气相沉积（PECVD）然后进行低能Ar+离子轰击来形成高度均匀的淬火碳（Q-carbon）层，以实现Q-carbon薄膜的晶片级集成。PECVD后，9 nm和20 nm厚的硅掺杂类金刚石碳（Si-DLC）薄膜显示出完全转化为Q-碳使用250 eV的Ar+离子通过负偏压。然而，这种转换只是部分的30纳米厚的膜。进行详细的EELS、XPS、拉曼和EDS研究以证实通过该方法形成Q-碳。我们讨论了Q-碳形成的机制作为一个结果的低能离子轰击在PECVD薄膜。这些离子在负偏压过程中的能量足以产生Frenkel缺陷，这支持了沉积态碳中的三重配位sp2碳单元转化为Q-碳中的sp3键合五原子四面体单元。该过程提高了sp3键合碳的原子序数密度和分数。这些金刚石四面体是随机堆积的，为金刚石提供了容易的成核位点。如果下面的衬底可以通过畴匹配外延提供用于金刚石生长的外延模板，则可以实现金刚石外延膜的晶片级生长，用于晶片级集成和由金刚石相关材料制造的下一代新型器件。
We describe the formation of highly uniform Quenched-carbon (Q-carbon) layers by plasma-enhanced chemical vapor deposition (PECVD) followed by low-energy Ar+ion bombardment to achieve wafer-scale integration of Q-carbon films. After PECVD, 9 nm and 20 nm thick silicon-doped diamond-like carbon (Si-DLC) films showed complete conversion into Q-carbon using 250eV Ar+ions via negative biasing. However, this conversion was only partial for 30 nm thick films. Detailed EELS, XPS, Raman, and EDS studies were carried out to confirm the formation of Q-carbon by this method. We discuss the mechanism of Q-carbon formation as a result of low-energy ion bombardment during PECVD of thin films. These ions during negative biasing are energetic enough to create Frenkel defects, which support the conversion of the three-fold coordinated sp2carbon units in as-deposited carbon into sp3bonded five-atom tetrahedron units in Q-carbon. This process enhances the atomic number density and fraction of sp3bonded carbon. These diamond tetrahedra are randomly packed and provide easy nucleation sites for diamond. If the underlying substrate can provide an epitaxial template for diamond growth via domain matching epitaxy, then wafer-scale growth of diamond epitaxial films can be achieved for wafer-scale integration and next-generation novel device manufacturing from diamond-related materials.