Defect generation in electronic devices under plasma exposure: Plasma-induced damage
Defect generation in electronic devices under plasma exposure: Plasma-induced damage
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DOI：
10.7567/jjap.56.06ha01
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发表时间：
2017-05
影响因子：
1.5
通讯作者：
K. Eriguchi
中科院分区：
文献类型：
--
作者：
K. Eriguchi
对ULSI电路的更高性能的日益增长的需求需要根据摩尔定律积极地缩小器件特征尺寸。等离子体处理在金属氧化物半导体场效应晶体管（MOSFET）中实现具有各向异性特征的精细图案方面起着重要作用。本文全面论述了等离子体处理的负面影响-等离子体诱导损伤（PID）。PID自然地不仅改变材料的表面形态，而且由于材料中的缺陷产生而降低MOSFET的性能和可靠性。PID的三个关键机制，即，物理，电，和光子辐照相互作用，概述了建模，表征技术，和实验证据迄今为止报道。此外，一些新兴的主题-在ULSI电路的PID和PID的恢复所造成的参数变化的控制-作为未来的前景进行了讨论。
The increasing demand for higher performance of ULSI circuits requires aggressive shrinkage of device feature sizes in accordance with Moore’s law. Plasma processing plays an important role in achieving fine patterns with anisotropic features in metal–oxide–semiconductor field-effect transistors (MOSFETs). This article comprehensively addresses the negative aspect of plasma processing — plasma-induced damage (PID). PID naturally not only modifies the surface morphology of materials but also degrades the performance and reliability of MOSFETs as a result of defect generation in the materials. Three key mechanisms of PID, i.e., physical, electrical, and photon-irradiation interactions, are overviewed in terms of modeling, characterization techniques, and experimental evidence reported so far. In addition, some of the emerging topics — control of parameter variability in ULSI circuits caused by PID and recovery of PID — are discussed as future perspectives.