Sensitivity enhancement of chemically amplified EUV resist by adding diphenyl sulfone derivatives
Sensitivity enhancement of chemically amplified EUV resist by adding diphenyl sulfone derivatives
复制标题
添加二苯砜衍生物提高化学放大型 EUV 光刻胶的灵敏度
DOI：
10.1117/12.2551865
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Kozawa Takahiro
中科院分区：
文献类型：
--
作者：
Okamoto Kazumasa;Kawai Shunpei;Kozawa Takahiro
由于在半导体器件的大规模生产中需要低成本的小型化，已经开始引入使用波长为13.5nm的软X射线的EUV光刻。化学放大抗蚀剂（CAR）已经被应用了很多年，也是极紫外抗蚀剂的最有前途的材料之一。然而，抗蚀剂性能（分辨率，线边缘粗糙度和灵敏度）显示权衡关系和寻找解决方案一直是一个严重的问题。在先前的工作中，我们的小组已经表明，将二对甲苯基砜（Di-p-tolyl sulfone，简称AGP）添加到CAR中可以提高产酸效率（产酸促进剂（acid-generating promoter，简称AGP））。在电子束作用下，聚乙烯作为去质子化的促进剂和离子化聚合物与电子之间的复合抑制剂，提高了抗蚀剂的抗电子束性能。在这项研究中，我们研究了CAR的灵敏度，以13.5 nm EUV光后，添加新的二苯砜衍生物。研究了添加二苯砜衍生物对电子束光刻的影响。并对AGP的具体作用进行了讨论。
Introduction of EUV lithography using soft X-ray at wavelength of 13.5 nm has been started because of demand for miniaturization at low cost in mass production of semiconductor devices. Chemically amplified resist (CAR) has been utilized for many years and is also one of the promising materials for EUV resist. However, resist performances (resolution, line edge roughness, and sensitivity) show trade-off relationship and the searching for the solution has been still a serious problem. In the previous work, our group has shown that addition of Di-p-tolyl sulfone (DTS) into CAR increases acid generation efficiency (acid-generating promoter (AGP)). DTS acts as deprotonation promoter and recombination inhibitor between ionized polymer and electron. The resist performance upon exposure to electron beams (EB) was improved. In this study, we investigate the sensitivity of CAR to 13.5 nm EUV light upon adding new diphenyl sulfone derivatives. EB lithographic effects by adding some diphenyl sulfone derivatives were also studied. And the detail roles of AGP are also discussed.