A novel wideband 1-π model with accurate substrate modeling for on-chip spiral inductors
A novel wideband 1-π model with accurate substrate modeling for on-chip spiral inductors
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DOI：
10.1109/cicc.2010.5617445
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发表时间：
2010-11
期刊：
影响因子：
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通讯作者：
Huanhuan Zou;Jun Liu;J. Wen;Huang Wang;Lingling Sun;Zhiping Yu
中科院分区：
文献类型：
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作者：
Huanhuan Zou;Jun Liu;J. Wen;Huang Wang;Lingling Sun;Zhiping Yu
提出了一种新的片上螺旋电感宽带1-π等效电路模型。提出了一种由R/L/C组成的衬底网络来模拟硅衬底中的宽带损耗机制。考虑了绕组的集肤效应和分布效应。采用标准0.18 μm 1 P6 M RF CMOS工艺制作了一系列不同几何尺寸的电感，验证了模型的正确性。最高可达40 GHz，仿真结果与实测数据吻合良好，验证了1-π模型比1-π或T-模型具有更好的宽带预测能力，比2-π模型具有更简单的拓扑结构。
A novel wideband 1-π equivalent circuit model for on-chip spiral inductors is presented. A substrate network, consisting of R/L/C, is proposed to model the broadband loss mechanisms in the silicon substrate. The skin and distributed effects for windings have been taken into account. A series of inductors with different geometries are fabricated in standard 0.18-µm 1P6M RF CMOS process to verify the model. Excellent agreements have been obtained between the modeled and measured data up to 40 GHz, which verify that the proposed 1-π model naturally has better wideband prediction capability than published 1-π or T-models, and simpler topology than 2-π models for on-chip spiral inductors.