Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation
Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation
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DOI：
10.1088/0256-307x/26/2/024203
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发表时间：
2009-01
影响因子：
3.5
通讯作者：
Sun Huajun;Hou Lisong;Wu Yiqun;Tang Xiao-dong
中科院分区：
文献类型：
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作者：
Sun Huajun;Hou Lisong;Wu Yiqun;Tang Xiao-dong
我们证明了一个可逆的电阻开关效应，不依赖于非晶-结晶相变的纳米级电容器样的细胞使用Ge 1 Sb 4 Te 7薄膜作为工作材料。所施加的电压的极性和幅度在低电阻状态和高电阻状态之间切换电池电阻，如通过导电原子力显微镜（CAFM）的膜的电流-电压特性所揭示的。这种可逆的SET/SET开关效应由电压脉冲及其极性引起。由于开关效应引起的电阻变化约为两个数量级。
We demonstrate a reversible resistance switching effect that does not rely on amorphous-crystalline phase transformation in a nanoscale capacitor-like cell using Ge1Sb4Te7 films as the working material. The polarity and amplitude of the applied electric voltage switches the cell resistance between low- and high-resistance states, as revealed in the current-voltage characteristics of the film by conductive atomic force microscopy (CAFM). This reversible SET/RESET switching effect is induced by voltage pulses and their polarity. The change of electrical resistance due to the switching effect is approximately two orders of magnitude.