Study of hydrogen effects on microstructural development of SiC base materials under simultaneous irradiation with He- and Si-ion irradiation conditions
Study of hydrogen effects on microstructural development of SiC base materials under simultaneous irradiation with He- and Si-ion irradiation conditions
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DOI：
10.1016/j.jnucmat.2004.04.122
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发表时间：
2004-08
影响因子：
3.1
通讯作者：
A. Hasegawa;S. Miwa;S. Nogami;A. Taniguchi;T. Taguchi;K. Abe
中科院分区：
文献类型：
--
作者：
A. Hasegawa;S. Miwa;S. Nogami;A. Taniguchi;T. Taguchi;K. Abe
利用透射电镜研究了SiC/SiC复合材料在800和1000 °C、10 dpa的多离子束辐照下的显微组织演变。每个复合材料部件中的显微组织演变取决于部件晶粒结构、氦或氢注入方式和辐照温度。在这项研究中，H和He气体元素的协同效应上的空腔形成的复合材料组件进行了讨论。
The microstructural development of SiC/SiC composite under the multi-ion beam irradiation up to 10 dpa at 800 and 1000 °C was investigated by transmission electron microscopy. Microstructural evolution in each composites component was dependent on the component grain structures, the helium or hydrogen implanting mode and the irradiation temperature. In this study, the synergistic effects of H and He gas elements on cavity formation in the composite component are discussed.