Control of Zn composition (0 < x < 1) in Cd1−xZnxTe epitaxial layers on GaAs substrates grown by MOVPE
Control of Zn composition (0 < x < 1) in Cd1−xZnxTe epitaxial layers on GaAs substrates grown by MOVPE
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DOI：
10.1016/j.apsusc.2004.09.144
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发表时间：
2005-05
影响因子：
6.7
通讯作者：
K. Yasuda;M. Niraula;H. Kusama;Y. Yamamoto;M. Tominaga;K. Takagi;Y. Aagata
中科院分区：
文献类型：
--
作者：
K. Yasuda;M. Niraula;H. Kusama;Y. Yamamoto;M. Tominaga;K. Takagi;Y. Aagata
采用常压金属有机气相外延法在（100）GaAs衬底上生长出了覆盖整个组成范围（x从0到1）的Cd1−xZnxTe外延层。在560℃的生长温度和大于等于2的VI/II族前驱体流速比下，我们可以严格控制生长膜上Zn的组成。在多种锌成分下获得了高晶体质量的外延层。双晶摇摆曲线（DCRC）半最大值全宽（FWHM）值在260 ~ 670 arcsec之间。低温PL测量显示出明显的束缚激子发射和微弱的深能级发射。
Cd1−xZnxTe epitaxial layers over the entire composition range (x from 0 to 1) were grown on (100) GaAs substrates by atmospheric pressure metalorganic vapor phase epitaxy. A growth temperature of 560°C, and the group VI/II precursor flow rate ratio of 2 or larger enabled us to control the Zn composition strictly on the grown epilayers. Epitaxial layers with high crystal quality were obtained in a wide range of Zn composition. The double crystal rocking curves (DCRC) full-width at half maximum (FWHM) values were between 260 and 670 arcsec at the end points of alloy range. The low-temperature PL measurements showed distinct bound-exciton emissions and weak deep-level emissions.