Oxidation and reduction of copper oxide thin films
Oxidation and reduction of copper oxide thin films
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DOI：
10.1016/0254-0584(92)90243-2
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发表时间：
1991-01
影响因子：
4.6
通讯作者：
Jian Li;J. Mayer
中科院分区：
文献类型：
--
作者：
Jian Li;J. Mayer
用~(16)O(α，α)~(16)O氧共振技术和透射电子显微镜相结合的方法研究了氧化铜薄膜中氧的扩散诱导现象，为研究氧化铜基质中氧化铜相的形核和生长动力学提供了一种方法。在还原过程中，Cu2O在CuO基质中呈不连续的颗粒生长形态。Cu2O-CuO相界的迁移是由氧沿移动相界的扩散引起的。离子球磨高电流密度的CuO薄膜可以形成亚稳相Cu4O3。难熔金属(Zr、Ti)和还原气氛能显著提高CuO薄膜的还原速率。铜氧化物还原和氧化的动力学研究表明，这两个过程是不对称的，且后者速度较快。
Oxygen diffusion induced phenomena in copper oxide thin films have been studied by a combination of the16O(α, α)16O oxygen resonance technique and the transmission electron microscopy (TEM), which provides a method for studing the kinetics of nucleation and growth of the Cu2O phase in the CuO matrix. A discontinuous morphology of grain growth of Cu2O is found in the CuO matrix during reduction. The migration of the Cu2O-CuO phase boundary is induced by oxygen diffusion along the moving phase boundary. A metastable phase Cu4O3can be formed by ion milling the CuO film with high current density. The refractory metals (Zr and Ti) and reducing ambients can significantly enhance the reduction rate of CuO films. The kinetics study of the reduction and oxidation of copper oxides shows that the two processes are asymmetrical and the latter is faster.