Kv channel gating requires a compatible S4-S5 linker and bottom part of S6, constrained by non-interacting residues.
Kv channel gating requires a compatible S4-S5 linker and bottom part of S6, constrained by non-interacting residues.
复制标题
DOI:
10.1085/jgp.200810048
复制
发表时间:
2008-12
期刊:
影响因子:
--
通讯作者:
Snyders DJ
中科院分区:
文献类型:
--
作者:
Labro AJ;Raes AL;Grottesi A;Van Hoorick D;Sansom MS;Snyders DJ
Voltage-dependent K+ channels transfer the voltage sensor movement into gate opening or closure through an electromechanical coupling. To test functionally whether an interaction between the S4-S5 linker (L45) and the cytoplasmic end of S6 (S6T) constitutes this coupling, the L45 in hKv1.5 was replaced by corresponding hKv2.1 sequence. This exchange was not tolerated but could be rescued by also swapping S6T. Exchanging both L45 and S6T transferred hKv2.1 kinetics to an hKv1.5 background while preserving the voltage dependence. A one-by-one residue substitution scan of L45 and S6T in hKv1.5 further shows that S6T needs to be α-helical and forms a “crevice” in which residues I422 and T426 of L45 reside. These residues transfer the mechanical energy onto the S6T crevice, whereas other residues in S6T and L45 that are not involved in the interaction maintain the correct structure of the coupling.
登录
查看更多内容
影响因子:
64.8
作者:
Long, Stephen B.;Tao, Xiao;MacKinnon, Roderick
通讯作者:
MacKinnon, Roderick
影响因子:
3.8
作者:
Labro, AJ;Raes, AL;Snyders, DJ
通讯作者:
Snyders, DJ
影响因子:
3.8
作者:
Kitaguchi, Tetsuya;Sukhareva, Manana;Swartz, Kenton J
通讯作者:
Swartz, Kenton J
影响因子:
3.8
作者:
Hackos, David H;Chang, Tsg-Hui;Swartz, Kenton J
通讯作者:
Swartz, Kenton J
影响因子:
56.9
作者:
Long, SB;Campbell, EB;MacKinnon, R
通讯作者:
MacKinnon, R