STRESS IN THERMALLY ANNEALED PARYLENE FILMS
STRESS IN THERMALLY ANNEALED PARYLENE FILMS
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DOI：
10.1007/bf02684208
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发表时间：
1992-10-01
影响因子：
2.1
通讯作者：
MCDONALD, JF
中科院分区：
文献类型：
--
作者：
DABRAL, S;VANETTEN, J;MCDONALD, JF
应力是影响薄膜多芯片组件（MCM）制造和可靠性的重要因素。应力可导致粘合失效、金属丝开裂和聚合物断裂。聚对二甲苯可以在低压缩应力状态下沉积，在这里，我们探讨其温度-应力行为。厚聚对二甲苯-n（PA-n）膜（4-7 μ m）和Si衬底之间的热膨胀系数（TCE）失配所产生的应力作为温度的函数进行了研究。应力的测量上沉积的薄膜，热退火后，也在原位。所沉积的膜处于20 MPa的压应力下。当薄膜退火时，应力降低，然后变成拉伸，峰值约为53 MPa。观察到PA-n薄膜在200和270摄氏度左右的晶相转变过程中应力降低。该应力与其他来源的报告数据进行了比较，结果一致。还评估了PA-c（氯化）和共聚PA-n和e（乙基）膜以及氟化聚对二甲苯（PA-f）中的应力。有效玻璃化转变温度和线性膨胀系数也已估计。
Stress is a problem for thin film Multichip Modules (MCM) fabrication and reliability. Stress can cause adhesion failure, wire cracking and fracture of the polymer. Parylene can be deposited in a low compressive stress state, and here we explore its temperature-stress behavior. The stress generated by thermal coefficient of expansion (TCE) mismatch between thick parylene-n (PA-n) films (4-7 mum) and Si substrates has been studied as a function temperature. Measurements of stress were made on as-deposited films; after thermal annealing and also in-situ. The as-deposited films are under compressive stress of 20 MPa. As the films are annealed, the stress decreases and then becomes tensile, peaking at about 53 MPa. It was observed that stress was reduced in PA-n films during the crystal phase transformations at around 200 and 270-degrees-C. The stress has been compared to reported data from other sources and found to agree. Stress in PA-c (chlorinated), and co-polymerized PA-n and e (ethyl) films, and a fluorinated parylene (PA-f) are also evaluated. The effective glass transition temperatures and the linear coefficient of expansion have also been estimated.