Electron field emission from nanostructured cubic boron nitride islands
Electron field emission from nanostructured cubic boron nitride islands
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DOI：
10.1063/1.2830006
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发表时间：
2008-01
影响因子：
4
通讯作者：
K. Teii;S. Matsumoto;J. Robertson
中科院分区：
文献类型：
--
作者：
K. Teii;S. Matsumoto;J. Robertson
纳米晶体组装的立方氮化硼 (cBN) 岛是通过在电感耦合含氟等离子体中使用低能 (~20eV) 离子辐照形成的。表面形态和粗糙度的时间演变揭示了初始 sp2 键合 BN 和随后的 cBN 的三维岛状生长，并伴随着高频率的再成核。 cBN岛的形成增强了场发射，并且由于岛相关场的增加而将开启场降低至9V/μm左右。结果表明，与其他宽带隙半导体相比，立方氮化硼在场发射器方面具有巨大潜力。
Nanocrystal-assembled cubic boron nitride (cBN) islands are formed by using low-energy (∼20eV) ion irradiation in an inductively coupled fluorine-containing plasma. The temporal evolution of surface morphology and roughness reveals three-dimensional island growth for initial sp2-bonded BN and subsequent cBN, accompanied by a high frequency of renucleation. The formation of cBN islands enhances the field emission and reduces the turn-on field down to around 9V∕μm due to an increase in the island-related field. The results demonstrate the high potential of cBN for field emitters, comparable to other wide band gap semiconductors.