Nonvolatile logic-in-memory array processor in 90nm MTJ/MOS achieving 75% leakage reduction using cycle-based power gating
Nonvolatile logic-in-memory array processor in 90nm MTJ/MOS achieving 75% leakage reduction using cycle-based power gating
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非易失性%20内存中逻辑%20array%20处理器%20in%2090nm%20MTJ/MOS%20实现%2075%%20泄漏%20减少%20使用%20基于周期的%20power%20门控
DOI:
10.1109/isscc.2013.6487696
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发表时间:
2013
期刊:
影响因子:
--
通讯作者:
T. Hanyu
中科院分区:
文献类型:
--
作者:
M. Natsui;D. Suzuki;N. Sakimura;R. Nebashi;Y. Tsuji;A. Morioka;T. Sugibayashi;S. Miura;H. Honjo;K. Kinoshita;S. Ikeda;T. Endoh;H. Ohno;T. Hanyu
Nonvolatile logic-in-memory (NV-LIM) architecture [1], where magnetic tunnel junction (MTJ) devices [2] are distributed over a CMOS logic-circuit plane, has the potential of overcoming the serious power-consumption problem that has rapidly become a dominant constraint on the performance improvement of today's VLSI processors. Normally-off and instant-on capabilities with a small area penalty due to non-volatility and three-dimensional-stackability of MTJ devices in the above structure allow us to apply a power-gating technique in a fine temporal granularity, which can perfectly eliminate wasted power dissipation due to leakage current. The impact of embedding nonvolatile memory devices into a logic circuit was, however, demonstrated by using only small fabricated primitive logic-circuit elements [3], memory-like structures such as FPGA [4], or circuit simulation because of the lack of an established MTJ-oriented design flow reflecting the chip-fabrication environment, while larger-capacity and/or high-speed-access MRAM has been increasingly developed. In this paper, we present an MTJ/MOS-hybrid video coding hardware that uses a cycle-based power-gating technique for a practical-scale MTJ-based NV-LIM LSI, which is fully designed using the established semi-automated MTJ-oriented design flow.