Production of low cost silicon wafers by continuous casting method-development of drip-controlled method
Production of low cost silicon wafers by continuous casting method-development of drip-controlled method
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连铸法生产低成本硅片——滴控法的开发
DOI：
10.1109/wcpec.1994.519953
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
I. Hide
中科院分区：
文献类型：
--
作者：
S. Goda;T. Moritani;Y. Hatanaka;H. Shimizu;I. Hide
连续铸造法（CCM）是为获得低成本硅片而设计的。该方法通过在硅熔化和注入区的两侧分别设置预热区和晶体生长和冷却区，达到降低晶片成本的生产效果。我们已经开发了滴控法（DCM）作为连铸机的铸造方法。在DCM中，熔融硅的注入和晶体生长同时进行，并且熔融硅的热量被积极地用作热源以控制晶体生长。DCM是最有效的连铸方法。通过DCM生产尺寸为320 mm正方形、高度为260-300 mm的批量型锭。在整个锭中获得5-15 ppma的氧含量和小于5 ppma的碳含量。使用我们的标准电池工艺，在晶片尺寸为100 mm/spl times/100 mm的情况下，逆生长方向的电池效率产率超过13.5%，为80%。在JQA中测得的最大值为14.3%。本研究所量测的太阳能电池效率、载子寿命及扩散长度，显示出DCM在获得单向成长及柱状结构上的优势。
The continuous casting method (CCM) has been designed to obtain low cost silicon wafers. This method has the objective of wafer cost reduction production effect through the installation of a pre-heating zone and a crystal growth and cooling zone separately on both sides of a silicon melting and injecting zone. We have developed the drip-controlled method (DCM) as a casting method for CCM. In DCM, the injection of molten silicon and the crystal growth are carried out simultaneously and the heat of molten silicon is utilized actively as a heat source to control the crystal growth. DCM is the most effective casting method for continuous casting. Batch-type ingots with a size of 320 mm square, height 260-300 mm, were produced by DCM. An oxygen content of 5-15 ppma and a carbon content of less than 5 ppma were obtained throughout the ingots. The cell efficiency yield of more than 13.5% was 80% against the growth direction, with a wafer size of 100 mm/spl times/100 mm using our standard cell process. A maximum value was found of 14.3% measured in JQA. The solar cell efficiency, the carrier lifetime and the diffusion length measured in this study showed DCM had an advantage for obtaining one-directional growth and columnar structure.