Fabrication and Photoluminescence of Hierarchical SiC Nanowires
Fabrication and Photoluminescence of Hierarchical SiC Nanowires
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分层SiC纳米线的制备和光致发光
DOI：
10.2174/157341312800167560
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发表时间：
2012-04-01
影响因子：
1.5
通讯作者：
Tang, Weihua
中科院分区：
文献类型：
--
作者：
Chen, Jianjun;Shi, Qiang;Tang, Weihua
通过对碳质二氧化硅干凝胶的简单加热，合成了分层单晶- sic纳米线。在垂直于分层纳米线[111]生长方向的方向上观察到相当高密度的层错。讨论了一种可能的气固生长机制。在室温下，分层SiC纳米线的光致发光光谱显示在406 nm和432 nm处有两个发射峰。432 nm处的蓝色发射峰可能与3C-SiC有关，而406 nm处的发射峰可能是由3C-SiC纳米线基体中的层错形成的6H-SiC片段。
Hierarchical single-crystalline beta-SiC nanowires were synthesized by simply heating carbonaceous silica xerogel. A fairly high density of stacking faults was observed perpendicular to [111] growth direction of the hierarchical nanowires. A possible vapor-solid growth mechanism for the hierarchical nanowires was discussed. The photoluminescence spectrum of hierarchical SiC nanowires at room temperature shows two emission peaks at 406 nm and 432 nm. The blue emission at 432 nm may be related to 3C-SiC, while the emission peak at 406 nm may be attributed to 6H-SiC segments formed by stacking faults in 3C-SiC nanowire matrix.